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Bipolar transistors, MOSFETs, IGBTs...
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Power transistor / MOSFET - 10 - 500 V | HEXFET®
With the continuously changing demands of the industrial markets there is an apparently growing need for dependable and rugged switching devices. Pushing the limits of...
Power transistor / MOSFET - 10 - 500 V | HEXFET®
With the continuously changing demands of the industrial markets there is an apparently growing need for dependable and rugged switching devices. Pushing the limits of efficiency and reliability, new designs are based on demands for more power and longer battery life to be more suitable for large battery-driven applications, such as forklifts, uninterruptible power supply (UPS) systems, power tools, and more.
Integral to these designs is the need for rugged and efficient MOSFETs. The cutting-edge, latest IRs power MOSFETs conforms to the needs of many applications, offering the top of the line devices and the trustiest submissions on the market.
Integral to these designs is the need for rugged and efficient MOSFETs. The cutting-edge, latest IRs power MOSFETs conforms to the needs of many applications, offering the top of the line devices and the trustiest submissions on the market.
Power transistor / MOSFET - -55 V ... +200 V | IRF series
The MOSFETs integrate two HEXFET by IR is a dual powered device that offers...
Power transistor / MOSFET - -55 V ... +200 V | IRF series
The MOSFETs integrate two HEXFET by IR is a dual powered device that offers low cost and space saving features in a dense, high component models for better chip board space sensitivity. It is available in a variety of designs such as dual N-Channel, dual P-Channel or dual N/P-Channel configurations.
Power transistor / MOSFET - 25 - 100 V | IRFH Series
The FastIRFET™ family by IR has a benchmark performance that are best in the R*Q figure of merit. The series features optimized...
Power transistor / MOSFET - 25 - 100 V | IRFH Series
The FastIRFET™ family by IR has a benchmark performance that are best in the R*Q figure of merit. The series features optimized...
Power transistor / MOSFET - 25 - 100 V | IRF series
International Rectifier's Strong IRFET™ family maximizes the superior current carying capacity under...
Power transistor / MOSFET - 25 - 100 V | IRF series
International Rectifier's Strong IRFET™ family maximizes the superior current carying capacity under a low RDS(on). Plus the reputations it has build through time had given them the edge towards market and also it features its improved gate, avalanche and dynamic dv/dt ruggedness ideal for industrial low frequency applications including motor drives, power tools, inverters and battery management.
Power IGBT - 300 - 1200 V | IRG Series
The IR international rectifier provides a wide range in its IGBT portfolio offerings ranging from 300V to 1200V. This is based...
Power IGBT - 300 - 1200 V | IRG Series
The IR international rectifier provides a wide range in its IGBT portfolio offerings ranging from 300V to 1200V. This is based on specific technology that provides the best performance for various applications. In addition, the IR comes with a wide selection of IGBT dies that are designed for medium to high power modules with optimized layouts, large gate pads and integrated Rg. For modules requiring the highest reliability, the solderable front metal SFM die can be used to remove bond wiring.
IGBT - 360 - 450 V | FG, ISL9 series
FAIRCHILD presents their newest line of automotive ignition with IGBT. It is specially...
IGBT - 360 - 450 V | FG, ISL9 series
FAIRCHILD presents their newest line of automotive ignition with IGBT. It is specially designed to have the highest clamp energy density of all devices on the market and low saturation voltage. Provides optimum performance and caters to a multitude of automotive applications. A comprehensive manual is included in the package.
Bipolar transistor - -400 V ... + 800 V | BD, FJ, KS, D4x, TIP series
Fairchild introduces an extensive and proven transistor product portfolio that transcends...
Bipolar transistor - -400 V ... + 800 V | BD, FJ, KS, D4x, TIP series
Fairchild introduces an extensive and proven transistor product portfolio that transcends any other similar equipment available in the market today. Based on the application that you wish to adapt, your chosen design requires an intensive blend of general purpose, Darlington, RF, JFET, built-in bias network or even low saturation transistors.
Darlington transistor - -30 V ... + 110 V | NZT, KSP, KST, MMBT, PZT series
The NZT605 is a NPN Darlington Transistor which is a device uniquely designed...
Darlington transistor - -30 V ... + 110 V | NZT, KSP, KST, MMBT, PZT series
The NZT605 is a NPN Darlington Transistor which is a device uniquely designed...
Small-signal transistor - -400 V ... + 400 V | 2Nxxxx, BCxxx, FFB, MMB series
Fairchild created a transistor that is used for many purposes. It has a...
Small-signal transistor - -400 V ... + 400 V | 2Nxxxx, BCxxx, FFB, MMB series
Fairchild created a transistor that is used for many purposes. It has a switch requiring collector currents that reaches up to 500 mA. It can be used as active component for switches and amplifiers that's in demand in all industries. One of Fairchild's creation that is one of the best.
IGBT - 300 - 1500 V | FG, HGT, PCH, SG series
Fairchild's Insulated Gate Bipolar Transistors (IGBTs) offers better EOFF and VSAT for Switch...
IGBT - 300 - 1500 V | FG, HGT, PCH, SG series
Fairchild's Insulated Gate Bipolar Transistors (IGBTs) offers better EOFF and VSAT for Switch Mode Power Supply designs. This control smoothens switching waveforms producing less EMI. An optimized design process of the manufacturing process of Fairchild IGBTs provides repeatability and better control of the top side structure, resulting in tighter specifications.
Phototransistor - SFH 3211 FA
This Osram SMT Topled package comes equipped with a reverse gull-wing and is available in two versions, either with or without a daylight filter.