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Bipolar transistors, MOSFETs, IGBTs...
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Transistor
The Renesas transistors support a wide array of applications from the ones requiring ultra-small...
Transistor
The Renesas transistors support a wide array of applications from the ones requiring ultra-small size to large current or amplification applications. Furthermore, with tremendous efforts, the size of the chip was minimized by expanding from DMOS process products to UMOS process products, and the low on-resistance features have been grasped.
IGBT - G7H series
In industrial applications, IGBT's by Renesas are bases on thin wafer trenches that are enhanced thus setting...
IGBT - G7H series
In industrial applications, IGBT's by Renesas are bases on thin wafer trenches that are enhanced thus setting new benchmarks in technology. The product lineup for IGBT does include some of the high current IGBT's for circuits of power supplies like PFC's, solar inverter lighting and motor drives. They are supply circuits that are highly efficient and are achievable through the combination of PFC controllers and IGBT's.
Power transistor / MOSFET
The Power MOSFET family by Renesas Electronics includes breakdown ranges from 25-1,500V Vdss making it ideal for a variety of automotive, industrial and consumer...
Power transistor / MOSFET
The Power MOSFET family by Renesas Electronics includes breakdown ranges from 25-1,500V Vdss making it ideal for a variety of automotive, industrial and consumer applications. The wide range of current ratings up to 180A drain current combined with low on-resistance offers impressive energy efficiency.
Dual HWSON and Dual WPAK packages supplement HVSON, WPAK and LFPAK high performance Power MOSFET packages. This allows for high power density in a compact mounting area for the highest level of cost-efficient solutions. There are also standard packages available such as the TO-3P, TO-247, TO-220, etc.
Dual HWSON and Dual WPAK packages supplement HVSON, WPAK and LFPAK high performance Power MOSFET packages. This allows for high power density in a compact mounting area for the highest level of cost-efficient solutions. There are also standard packages available such as the TO-3P, TO-247, TO-220, etc.
MOSFET - 60 A | C2M0025120D
The C2M0025120D series of SiC MOSFETs are engineered to deliver fast switching services...
MOSFET - 60 A | C2M0025120D
The C2M0025120D series of SiC MOSFETs are engineered to deliver fast switching services with minimal capacitance. The blocking voltages they provide are also at high levels with low RDS. These units are easily paralleled and driven. Moreover, these devices from Cree are resistant to latch-up, and are very rugged and sturdy.
MOSFET - 11 A | C2M0160120D
Cree's CPM2-1200-0160B makes use of a 2nd-generation SiC MOSFET technology that enables high-speed...
MOSFET - 11 A | C2M0160120D
Cree's CPM2-1200-0160B makes use of a 2nd-generation SiC MOSFET technology that enables high-speed...
HEMT transistor - 8 W, 6.0 GHz | CGH60008D
Cree®, supplier of silicon carbon (SiC) and gallium nitrade (GaN) wafers and devices for wireless communications,...
HEMT transistor - 8 W, 6.0 GHz | CGH60008D
Cree®, supplier of silicon carbon (SiC) and gallium nitrade (GaN) wafers and devices for wireless communications,...
HEMT transistor - 120 W, 6.0 GHz | CGH60120D
The CGH60120D by Cree is a general purpose broadband die which offers a superior power...
HEMT transistor - 120 W, 6.0 GHz | CGH60120D
The CGH60120D by Cree is a general purpose broadband die which offers a superior power density and broader bandwidths unlike to Si and GaAs transistors. It is manufactured with gallium nitride(GaN) and high electron mobility transistor(HEMT). Plus, it offers a much higher voltage breakdown and a more superior electron drift velocity.
RF transistor / power - 6 W | CGH40006P
CGH40006P is a gallium-nitride, high-electron-mobility transistor that provides a general-purpose...
RF transistor / power - 6 W | CGH40006P
CGH40006P is a gallium-nitride, high-electron-mobility transistor that provides a general-purpose and broadband solution for various of RF and microwave operations. Cree's CGH40006P is capable of providing efficient high gain and wide bandwidth, making it suitable for linear and compressed amplifier circuits. This transistor functions with a potential difference of 28V.
Current phototransistor - 850 - 870 nm, 1 - 2.5 mA | S2829, S4404-01
Phototransistors amplify the current generated...
Current phototransistor - 850 - 870 nm, 1 - 2.5 mA | S2829, S4404-01
Phototransistors amplify the current generated by the input of light. Compared to photodiodes, a large output current can be derived even from a small active area.