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Central Semiconductor

Small-signal transistor - 1.3 W | BCX5x series

The CENTRAL SEMICONDUCTOR BCX51, BCX52,
and BCX53 types are...

Small-signal transistor - 1.3 W | BCX5x series

The CENTRAL SEMICONDUCTOR BCX51, BCX52,
and BCX53 types are PNP Silicon Transistors
manufactured by the epitaxial planar process, epoxy
molded in a surface mount package, designed for high
current general purpose amplifier applications.

Double transistor - 50 V, 200 mA | CMKT3920

Central Semiconductors CMKT3920 consists of two 50V, 200mA NPN transistors packaged in the space saving SOT-363. Designed for general purpose amplification...

Double transistor - 50 V, 200 mA | CMKT3920

Central Semiconductors CMKT3920 consists of two 50V, 200mA NPN transistors packaged in the space saving SOT-363. Designed for general purpose amplification and switching, the CMKT3920 is ideal for a wide range of power management applications.

Features
Low VCE(SAT)
High current rating
Low capacitance

Applications
Load switching
Small signal amplification
Lamp and relay drivers
MOSFET gate driver

Benefits
Two transistors in a single package
Space saving SOT-363 package
Low conduction loss

Transistor - 80 V, 500 mA | CTLT8099-M322S

Central Semiconductors CTLT8099-M322S is an energy efficient NPN transistor manufactured by the epitaxial planar process, packaged in a epoxy molded low profile...

Transistor - 80 V, 500 mA | CTLT8099-M322S

Central Semiconductors CTLT8099-M322S is an energy efficient NPN transistor manufactured by the epitaxial planar process, packaged in a epoxy molded low profile TLM322S case. This device is ideal for general purpose switching and amplification needs in circuits requiring a small package footprint and highly efficient energy performance.

Features
Low VCE(SAT)
High power density
Thermally efficient package

Applications
Load switching
Display drive
Power management
Gate drive

Benefits
Low profile TLM322S package
Space saving
Energy efficiency

Power transistor - 2 W | CZTA44HC

The CENTRAL SEMICONDUCTOR CZTA44HC type is
a...

Power transistor - 2 W | CZTA44HC

The CENTRAL SEMICONDUCTOR CZTA44HC type is
a surface mount epoxy molded silicon planar epitaxial
transistor designed for extremely high voltage and high
current applications.

Small-signal transistor - 350 mW | BCV47

The CENTRAL SEMICONDUCTOR BCV47 type is a
Silicon NPN Darlington...

Small-signal transistor - 350 mW | BCV47

The CENTRAL SEMICONDUCTOR BCV47 type is a
Silicon NPN Darlington Transistor manufactured by the
epitaxial planar process, epoxy molded in a surface mount
package, designed for applications requiring extremely high
gain.
ON Semiconductor

Power transistor / audio

Audio transistors...

Power transistor / audio

Audio transistors for high power audio circuits.

Bipolar transistor

NPN, PNP, and Complementary...

Bipolar transistor

NPN, PNP, and Complementary Transistors
Broad portfolio of bipolar NPN and PNP transistors.

IGBT - NG, TI series

Insulated gate bipolar transistors...

IGBT - NG, TI series

Insulated gate bipolar transistors (IGBTs) for electronic ignition, flash, motor drive and other high current switching applications.

JFET

N-Channel and P-Channel Junction Field...

JFET

N-Channel and P-Channel Junction Field Effect Transistors
Junction field effect transistors (JFETs) for RF, mixing and chopping circuits.

MOSFET

N-channel and P-channel metal oxide...

MOSFET

N-channel and P-channel metal oxide semiconductor field effect transistors (MOSFETs) for power conversion and switching circuits.
NXP Semiconductors

Darlington transistor

Fulfil your amplification and switching needs...

Darlington transistor

Fulfil your amplification and switching needs with our Darlington transistors. There are numerous PNP and NPN devices to choose from, all delivering very high DC current gain.

Double transistor

If you need bipolar transistors that can withstand high voltage pulses (EMI requirements), check out our high voltage devices with...

Double transistor

If you need bipolar transistors that can withstand high voltage pulses (EMI requirements), check out our high voltage devices with breakdown voltages from 100 V up to 400 V.

Key features and benefits

High VCEO
Low VCEsat

Key applications

Hook switch for wired telecom
LED driver for high currents, LCD backlighting
Half-bridge switch in CFL lighting
Switched mode power supply (low power)
HID front lighting

RF transistor / wide-band

The latest edition to our broad RF transistor portfolio: QUBiC4 Si and SiGe:C transistors.

These...

RF transistor / wide-band

The latest edition to our broad RF transistor portfolio: QUBiC4 Si and SiGe:C transistors.

These next generation devices offer the best RF noise figure versus gain performance, drawing the lowest current. This performance allows for better signal reception at low power and enables RF receivers to operate more robustly in noisy environments.

Bipolar transistor / power

Our high-voltage, high-speed planar-passivated NPN power switching...

Bipolar transistor / power

Our high-voltage, high-speed planar-passivated NPN power switching transistors are intended for use in various applications where switching performance is critical to the overall system, i.e. electronic ballast, battery chargers & Compact Fluorescent Lamp (CFL).

MOSFET for automotive applications

An in-depth understanding of automotive system requirements and focused technical capability enables...

MOSFET for automotive applications

An in-depth understanding of automotive system requirements and focused technical capability enables NXP to provide power semiconductor solutions across a wide spectrum of applications. From driving a simple lamp to the sophisticated needs of power control in engine, body or chassis applications, NXP power semiconductors can provide the answer to many automotive system power problems.
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