Bipolar transistors, MOSFETs, IGBTs...

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LS Industrial Systems

IGBT - 600 - 1 200V

Automotive modules of LSIS are optimized for Battery vehicle (NEV, Golf car and Forklift),...

IGBT - 600 - 1 200V

Automotive modules of LSIS are optimized for Battery vehicle (NEV, Golf car and Forklift),...
Taiwan Semiconductor

IGBT - max. 1200 V | TSG series

The TSG10N120CN using proprietary trench design and advanced NPT technology, the 1200V...

IGBT - max. 1200 V | TSG series

The TSG10N120CN using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers
superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This
device is well suited for the resonant or soft switching application such as induction heating, microwave oven,
etc.

Power transistor / MOSFET - -60 V ... +1000 V | TSM series

Features
● Advance Trench Process Technology
●...

Power transistor / MOSFET - -60 V ... +1000 V | TSM series

Features
● Advance Trench Process Technology
● High Density Cell Design for Ultra Low On-resistance
Application
● Load Switch
● PA Switch

Bipolar transistor / small-signal - -600 V ... +550 V

Small Signal Product
PNP Bipolar Transistor
- Epitaxial planar die construction
- Surface...

Bipolar transistor / small-signal - -600 V ... +550 V

Small Signal Product
PNP Bipolar Transistor
- Epitaxial planar die construction
- Surface Mount Device Type
- Moisture sensitivity level 1
- For high voltage switcing and amplifier application
- Pb free and RoHS compliant
- Green compound (Halogen free) with suffix "G" on
packing code and prefix "G" on date code
- Excellent hFE linearity
- Complements the 2SC5658
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