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MOSFET, IGBT and TRIAC module drivers
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MOSFET gate driver - 600 V | A4900
The A4900 is a high-voltage, high-speed, power IGBT or MOSFET driver providing three independent half-bridge channels for three-phase applications.
A bootstrap capacitor is used to provide the above battery supply voltage required...
A bootstrap capacitor is used to provide the above battery supply voltage required...
MOSFET gate driver - 600 V | A4900
The A4900 is a high-voltage, high-speed, power IGBT or MOSFET driver providing three independent half-bridge channels for three-phase applications.
A bootstrap capacitor is used to provide the above battery supply voltage required for N-channel MOSFETs or IGBTs used as high current switches. Direct control over all six gate drives in the 3-phase bridge is provided, allowing motors to be driven with block commutation or sinusoidal excitation. The power switches are protected from cross-conduction by integrated crossover control and fixed dead time.
Integrated diagnostics provide indication of undervoltage, overtemperature, and power bridge faults. They can be configured to protect the power switches under most short circuit conditions. Detailed diagnostics are available as a serial data word output.
The A4900 is provided in a 44-pin QSOP package (suffix LQ) that is lead (Pb) free, with 100% matte tin leadframe plating.
A bootstrap capacitor is used to provide the above battery supply voltage required for N-channel MOSFETs or IGBTs used as high current switches. Direct control over all six gate drives in the 3-phase bridge is provided, allowing motors to be driven with block commutation or sinusoidal excitation. The power switches are protected from cross-conduction by integrated crossover control and fixed dead time.
Integrated diagnostics provide indication of undervoltage, overtemperature, and power bridge faults. They can be configured to protect the power switches under most short circuit conditions. Detailed diagnostics are available as a serial data word output.
The A4900 is provided in a 44-pin QSOP package (suffix LQ) that is lead (Pb) free, with 100% matte tin leadframe plating.
MOSFET gate driver - 7 - 60 V | A3946
The A3946 is designed specifically for applications that require high power unidirectional DC motors, three-phase brushless DC motors, or other inductive loads. The A3946...
MOSFET gate driver - 7 - 60 V | A3946
The A3946 is designed specifically for applications that require high power unidirectional DC motors, three-phase brushless DC motors, or other inductive loads. The A3946 provides two high-current gate drive outputs that are capable of driving a wide range of power N-channel MOSFETs. The high-side gate driver switches an N-channel MOSFET that controls current to the load, while the low-side gate driver switches an N-channel MOSFET as a synchronous rectifier.
A bootstrap capacitor provides the above-battery supply voltage required for N-channel MOSFETs. An internal top-off charge pump for the high side allows DC (100% duty cycle) operation of the half-bridge.
A bootstrap capacitor provides the above-battery supply voltage required for N-channel MOSFETs. An internal top-off charge pump for the high side allows DC (100% duty cycle) operation of the half-bridge.
MOSFET gate driver - 12 - 50 V | A3932
The A3932 is a three-phase MOSFET controller for use with bipolar brushless DC motors. Its high gate-current drive capability allows driving a wide range of N-channel power MOSFETs and can support motor supply voltages to 50 V. Bootstrapped high-side drive blocks provide the floating positive supplies for the gate drive and minimize the component count normally required. The high-side circuitry also...
MOSFET gate driver - 12 - 50 V | A3932
The A3932 is a three-phase MOSFET controller for use with bipolar brushless DC motors. Its high gate-current drive capability allows driving a wide range of N-channel power MOSFETs and can support motor supply voltages to 50 V. Bootstrapped high-side drive blocks provide the floating positive supplies for the gate drive and minimize the component count normally required. The high-side circuitry also employs a unique FET monitoring circuit that ensures the gate voltages are at the proper levels before turn-on and during the ON cycle.
Internal fixed off-time PWM current-control circuitry can be used to regulate the maximum load current to a desired value. The peak load-current limit is set by the users selection of an input reference voltage and external sensing resistor. The fixed off-time pulse duration is set by a user-selected external RC timing network. For added flexibility, the PWM input can be used to provide speed/torque control, allowing the internal current control circuit to set the maximum current limit.
Optional synchronous rectification is included. This feature will short out the current path through the power MOSFET reverse body diodes during the PWM off-cycle current decay. This can minimize power dissipation in the power MOSFET, eliminate the need for external power clamp diodes, and potentially allow more economical choices for the MOSFET application.
The A3932 includes the commutation logic for Hall sensor ICs configured for 120 degree spacing. Power MOSFET protection features include bootstrap capacitor charging current monitor, undervoltage monitor, motor-lead short-to-ground, and thermal shutdown.
Internal fixed off-time PWM current-control circuitry can be used to regulate the maximum load current to a desired value. The peak load-current limit is set by the users selection of an input reference voltage and external sensing resistor. The fixed off-time pulse duration is set by a user-selected external RC timing network. For added flexibility, the PWM input can be used to provide speed/torque control, allowing the internal current control circuit to set the maximum current limit.
Optional synchronous rectification is included. This feature will short out the current path through the power MOSFET reverse body diodes during the PWM off-cycle current decay. This can minimize power dissipation in the power MOSFET, eliminate the need for external power clamp diodes, and potentially allow more economical choices for the MOSFET application.
The A3932 includes the commutation logic for Hall sensor ICs configured for 120 degree spacing. Power MOSFET protection features include bootstrap capacitor charging current monitor, undervoltage monitor, motor-lead short-to-ground, and thermal shutdown.
MOSFET gate driver - 5.5 - 50 V | A4910
The A4910 is a three-phase controller for use with N-channel external power MOSFETs and is specifically designed for automotive applications.
A unique charge pump regulator provides full (>10 V) gate drive for battery voltages down to 7 V, and allows the A4910 to operate...
A unique charge pump regulator provides full (>10 V) gate drive for battery voltages down to 7 V, and allows the A4910 to operate...
MOSFET gate driver - 5.5 - 50 V | A4910
The A4910 is a three-phase controller for use with N-channel external power MOSFETs and is specifically designed for automotive applications.
A unique charge pump regulator provides full (>10 V) gate drive for battery voltages down to 7 V, and allows the A4910 to operate with a reduced gate drive down to 5.5 V.
A bootstrap capacitor is used to provide the above battery supply voltage required for N-channel MOSFETs. An internal charge pump for the high-side drive allows DC (100% duty cycle) operation.
Full control over all six power MOSFETs in the 3-phase bridge is provided, allowing motors to be driven with block commutation or sinusoidal excitation. The power MOSFETs are protected from shoot-through by integrated crossover control and programmable dead time.
Current in each half bridge can be measured using integrated current sense amplifiers. These are three user-configurable differential amplifiers, with below ground common mode range and excellent transient response and settling time, allowing them to be used in low-side current sense applications.
A unique charge pump regulator provides full (>10 V) gate drive for battery voltages down to 7 V, and allows the A4910 to operate with a reduced gate drive down to 5.5 V.
A bootstrap capacitor is used to provide the above battery supply voltage required for N-channel MOSFETs. An internal charge pump for the high-side drive allows DC (100% duty cycle) operation.
Full control over all six power MOSFETs in the 3-phase bridge is provided, allowing motors to be driven with block commutation or sinusoidal excitation. The power MOSFETs are protected from shoot-through by integrated crossover control and programmable dead time.
Current in each half bridge can be measured using integrated current sense amplifiers. These are three user-configurable differential amplifiers, with below ground common mode range and excellent transient response and settling time, allowing them to be used in low-side current sense applications.
MOSFET gate driver - 4.5 - 50 V | A4957
The A4957 is a full-bridge controller for use with external N-channel power MOSFETs and is specifically designed for applications with high-power inductive loads such as brush DC motors.
A unique charge pump regulator provides full ( >10 V ) gate drive for battery voltages...
A unique charge pump regulator provides full ( >10 V ) gate drive for battery voltages...
MOSFET gate driver - 4.5 - 50 V | A4957
The A4957 is a full-bridge controller for use with external N-channel power MOSFETs and is specifically designed for applications with high-power inductive loads such as brush DC motors.
A unique charge pump regulator provides full ( >10 V ) gate drive for battery voltages...
A unique charge pump regulator provides full ( >10 V ) gate drive for battery voltages...
MOSFET gate driver - MD2131
The MD2131 by Supertex inc. is a Mosfet gate driver designed for applications such as medical ultrasound imaging and HIFU beam forming. This push-pull source gate driver offers...
MOSFET gate driver - MD2131
The MD2131 by Supertex inc. is a Mosfet gate driver designed for applications such as medical ultrasound imaging and HIFU beam forming. This push-pull source gate driver offers a superior speed that is ideally compatible with DT, Sonar and other ultrasound phase array focusing beam forming operation. The whole unit consists of CMOS digital logic input circuits, waveform amplitude control (8-bit current DAC), and four PWM current sources. These components make the MD2131 offers an in-phase and quadrature current switch matrix. Also, it comes with a look up table for sine and cosine angle to vector. For technicality, its angular resolution can reach up to 7.50 step having a total of 48 steps.
MOSFET gate driver - MD1716
The Supertex MD1716 features a high speed transmit pulser chip set and is created for medical ultrasound imaging operations but it can also be used to detect...
MOSFET gate driver - MD1716
The Supertex MD1716 features a high speed transmit pulser chip set and is created for medical ultrasound imaging operations but it can also be used to detect metal flaws. It comes with a piezoelectric transducer driver and has passed the non-destructive test. The Supertex MD1716 driver is created to match the gate driving demands of the Supertex TC8020.
It has also three channel logic controller circuits that possess a 12-low impedance MOSFET gate driver and each channel consists of two pairs of MOSFET gate drivers. Each control logic input has channel that also consists of A, B and C.
It has also three channel logic controller circuits that possess a 12-low impedance MOSFET gate driver and each channel consists of two pairs of MOSFET gate drivers. Each control logic input has channel that also consists of A, B and C.
MOSFET gate driver - MD1820 series
The Supertex MD1820 MOSFET driver are specially designed to drive high voltage P- and N-channel. The high speed, four channel driver finds use in ultrasounds and other applications that requires...
MOSFET gate driver - MD1820 series
The Supertex MD1820 MOSFET driver are specially designed to drive high voltage P- and N-channel. The high speed, four channel driver finds use in ultrasounds and other applications that requires high output current for a capacitive load. MD1820 with high-speed input stage is capable to operate from a 1.8 to 5.0V logic interface with 1.8 to 3.3V optimum operating input signal. The level translator switch threshold is set to average of the input logic 0 and logic 1 levels using an adaptive threshold circuit. Irrespective of the driver indicating bipolar signals, the input logic levels may be ground-referenced. The level translator utilizes a proprietary circuit to provide DC coupling with high-speed operation.