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Integrated circuits: random access memory (RAM)
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Serial memory / EEPROM - BR24A, BR25H, BR93H Series
ROHM serial EEPROMs are non-volatile memory optimized for data retention, available in a range of interfaces,...
Serial memory / EEPROM - BR24A, BR25H, BR93H Series
ROHM serial EEPROMs are non-volatile memory optimized for data retention, available in a range of interfaces, package types, and storage capacities.
105℃ Operation I2C BUS EEPROM BR24ASeries
(1K 2K 4K 8K 16K 32K 64K)
125℃ Operation SPI BUS EEPROM BR25H Series
(1K 2K 4K 8K 16K 32K 64K 128K)
125℃ Operation Microwire BUS EEPROM BR93H Series
(1K 2K 4K 8K 16K)
105℃ Operation I2C BUS EEPROM BR24ASeries
(1K 2K 4K 8K 16K 32K 64K)
125℃ Operation SPI BUS EEPROM BR25H Series
(1K 2K 4K 8K 16K 32K 64K 128K)
125℃ Operation Microwire BUS EEPROM BR93H Series
(1K 2K 4K 8K 16K)
EEPROM memory - 1 - 256 kb
The Atmel CryptoMemory® family offers a range of cost-efficient, high-security electrically erasable programmable read-only memory chips (EEPROMs) and host-side security for...
EEPROM memory - 1 - 256 kb
The Atmel CryptoMemory® family offers a range of cost-efficient, high-security electrically erasable programmable read-only memory chips (EEPROMs) and host-side security for...
EEPROM memory / serial-access - 1 kb - 1 Mb
For Serial EEPROM devices, Atmel is known to be one of the leading suppliers which has shipped more or less 12 billion of devices over the past 10 years. The Serial EEPROM are utilized to...
EEPROM memory / serial-access - 1 kb - 1 Mb
For Serial EEPROM devices, Atmel is known to be one of the leading suppliers which has shipped more or less 12 billion of devices over the past 10 years. The Serial EEPROM are utilized to save personal preferences and configuration data due to its ability to modify single bytes of data making it useful in various applications like automotive, telecommunication, medical, PC and industrial. Atmel offers 12C Serial EEPROM devices which are Microwire and SPI compatible. These devices are available in industry-standard packages including DFN, VFBGA, SOT23 and WLCSP. The Serial EEPROM devices features low pin count particularly developed for automotive and industrial temperature applications where low-voltage and low-power operation is a must.
EEPROM memory / parallel-access - 64 kb - 1 Mb
The ATMEL EEPROM devices is a one of a kind product. This product is designed to be used in a variety of applications. It is a definite must have in the Information...
EEPROM memory / parallel-access - 64 kb - 1 Mb
The ATMEL EEPROM devices is a one of a kind product. This product is designed to be used in a variety of applications. It is a definite must have in the Information Technology industry. It showcases the ability to store data to be updated byte-by-byte or by full sector, providing design flexibility. The parallel interface devices offer high-programming endurance and data retention, as well as faster read times than serial Interface protocols. It also features Atmel provides a complete selection of densities (64-Kbit to 4-Mbit), operating voltages, and device packages. A top of the line product for the IT Industry.
Erasable memory / OTP / EPROM / by UV - 256 kb - 8 Mb
The leading market firm Atmel brings a broad range of One-Time Programmable (OTP) EPROM with wide densities, faster speeds and options that are advanced and compatible with...
Erasable memory / OTP / EPROM / by UV - 256 kb - 8 Mb
The leading market firm Atmel brings a broad range of One-Time Programmable (OTP) EPROM with wide densities, faster speeds and options that are advanced and compatible with the new generation of applications. EPROM is an Electrically Programmable Read-Only Memory that retains its contents until it is exposed to ultraviolet light.
Offered in Battery-Voltage™ (2.7V), 3V and 5V, EPROMs from Atmel features 256Kbits to 8Mbits denstiy, 45ns speed and PDIP, SOIC, PLCC and TSSOP package options, these EPROMs become ideal to be used for storage of embedded program code in networking, telecommunications, graphic cards, the automotive industry and instrumentation.
Offered in Battery-Voltage™ (2.7V), 3V and 5V, EPROMs from Atmel features 256Kbits to 8Mbits denstiy, 45ns speed and PDIP, SOIC, PLCC and TSSOP package options, these EPROMs become ideal to be used for storage of embedded program code in networking, telecommunications, graphic cards, the automotive industry and instrumentation.
SDRAM memory module / RDRAM / DRAM - 2 - 8 Gb, DDR3 | H5T series
The mainstream, DDR3 SDRAM, can transfer data twice as fast as the current generation DDR2 SDRAMs. DDR3 SDRAM boasts high performance and low power consumption. It supports data transfer rate of up to 1.6Gb/s and operates at a lower power supply voltage of 1.5V, compared...
SDRAM memory module / RDRAM / DRAM - 2 - 8 Gb, DDR3 | H5T series
The mainstream, DDR3 SDRAM, can transfer data twice as fast as the current generation DDR2 SDRAMs. DDR3 SDRAM boasts high performance and low power consumption. It supports data transfer rate of up to 1.6Gb/s and operates at a lower power supply voltage of 1.5V, compared to DDR2. The DDR3 SDRAM is eco-friendly for it can operate at even lower power supply voltage of 1.35V contributing to lower power dissipation and extended battery life in mobile systems. The low-power operation of DDR3L, 1.35V DDR3 SDRAM, is also beneficial in high-density memory systems in power constrained applications such as servers and data centers. Using Hynix low-power memory modules can help customers reduce power consumption and utility expenditures, improve reliability and reduce carbon emissions. Hynix plans to offer DDR3 in densities of 1Gb to 4Gb, and is currently in volume production on 2Gb DDR3. Hynixs DDR3 modules exploit functions such as ZQ calibration, fly-by topology, dynamic on-die-termination, and levelization to ensure better signal integrity which guarantees higher performance.
SDRAM memory - 256 Mb - 8 Gb | H5T, H5PS series
The Hynix has a full line-up of Dynamic RAM to match and surpass the requirements of a broad array of consumer applications. Hynix presents a family of Synchronous DRAM (SDRAM) in 128-Mb to 512-Mb volumes,...
SDRAM memory - 256 Mb - 8 Gb | H5T, H5PS series
The Hynix has a full line-up of Dynamic RAM to match and surpass the requirements of a broad array of consumer applications. Hynix presents a family of Synchronous DRAM (SDRAM) in 128-Mb to 512-Mb volumes, packaged in TSOP-II and FBGA offered at an industrial temperature radius of -40 degrees Celsius to 85 degrees Celsius, and featuring very minimal power consumption levels.
DDR, DDR2 and even DDR3 SDRAMs are obtainable for extensive customer/client applications requiring more comprehensive information transference levels. For a broad range of functions such as Digital Television and Set-Top-Box, SDR SDRAM has been replaced by DDR, DDR2 and DDR3 SDRAM technologies. The Hynix Consumer memories have been utilized in an ample assortment of settings, despite what seems to be latent analysis rates.
DDR, DDR2 and even DDR3 SDRAMs are obtainable for extensive customer/client applications requiring more comprehensive information transference levels. For a broad range of functions such as Digital Television and Set-Top-Box, SDR SDRAM has been replaced by DDR, DDR2 and DDR3 SDRAM technologies. The Hynix Consumer memories have been utilized in an ample assortment of settings, despite what seems to be latent analysis rates.
SDRAM memory - max. 4 Gb | H5T, H5G series
The fame and popularity of Hynix has motivated the company to release an extensive range of products, each surpassing the quality of its previous product. 40nm class 2Gb GDDR5 is an ingenious graphics...
SDRAM memory - max. 4 Gb | H5T, H5G series
The fame and popularity of Hynix has motivated the company to release an extensive range of products, each surpassing the quality of its previous product. 40nm class 2Gb GDDR5 is an ingenious graphics memory card capable of providing designers with 7Gbps speed at a bandwidth of 28GB/sec with 32-bit I/O. The card is the ultimate choice for designers requiring high end graphics with improved speed and higher density, while considerably saving on power. The card needs just 1.35V power supply, which is believed to be less than 20% of the power previously used, especially the 1.5 variant. The graphics card can work tirelessly on high-end desktop and notebook graphics applications, and in computers designed with a General Purpose GPU architecture, thanks to their high bandwidth memory.
RAM memory / DDR / for mobile applications - 2 GB | H5MS series
The SK Hynix H5MS262(53)2JFR Series is 268,435,456-bit CMOS Low Power Double Data Rate Synchronous DRAM (Mobile DDR SDRAM) optimally suited for mobile operations which...
RAM memory / DDR / for mobile applications - 2 GB | H5MS series
The SK Hynix H5MS262(53)2JFR Series is 268,435,456-bit CMOS Low Power Double Data Rate Synchronous DRAM (Mobile DDR SDRAM) optimally suited for mobile operations which employ the battery such as PDAs, 2.5G and 3G cellular phones with internet connection and multimedia capacity, and hand-held PCs. It is formed as 4banks of 2,097,152 x32. The SK Hynix H5MS262(53)2JFR Series uses a double-data-rate framework, a 2n pre-fetch composition with an interface created to deliver two data per clock cycle at I/O pins, to attain high-speed progress. SK Hynix H5MS262(53)2JFR Series show synchronized operations attributed to both ascending and descending edges of the clock.
RAM memory / DDR / for mobile applications - 2 - 16 GB, DDR2 | H9TKNNN series
Hynix Mobile DDR2 can operate in temperature of -30oC ~ 85oC and has a lead and halogen free package featuring 168-ball FBGA and 12.0x12.0mm2, 0.8t, 0.5mm pitch.
The DDR2 has VDD1 of 1.8V and...
The DDR2 has VDD1 of 1.8V and...
RAM memory / DDR / for mobile applications - 2 - 16 GB, DDR2 | H9TKNNN series
Hynix Mobile DDR2 can operate in temperature of -30oC ~ 85oC and has a lead and halogen free package featuring 168-ball FBGA and 12.0x12.0mm2, 0.8t, 0.5mm pitch.
The DDR2 has VDD1 of 1.8V and VDD2, VDDCA and VDDQ of 1.2V with HSUL_12 interface. The DDR2 features double data rate architecture for command, address and data Bus, differential clock inputs (CK_t, CK_c) and bi-directional differential data strobe (DQS_t, DQS_c).
At both increasing and decreasing edge of the data strobe Programmable RL (Read Latency) and WL (Write Latency), DM masks write data. The DDR2 supports programmable burst length of 4, 8 and 16 auto refresh and self refresh. DDR2 features Auto TCSR (Temperature Compensated Self Refresh) supported by all bank auto refresh and per bank auto refresh.
The DDR2 has VDD1 of 1.8V and VDD2, VDDCA and VDDQ of 1.2V with HSUL_12 interface. The DDR2 features double data rate architecture for command, address and data Bus, differential clock inputs (CK_t, CK_c) and bi-directional differential data strobe (DQS_t, DQS_c).
At both increasing and decreasing edge of the data strobe Programmable RL (Read Latency) and WL (Write Latency), DM masks write data. The DDR2 supports programmable burst length of 4, 8 and 16 auto refresh and self refresh. DDR2 features Auto TCSR (Temperature Compensated Self Refresh) supported by all bank auto refresh and per bank auto refresh.