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• RAM memory / DDR / for mobile applications - 2 - 16 GB, DDR2 | H9TKNNN series

RAM memory / DDR / for mobile applications - 2 - 16 GB, DDR2 | H9TKNNN series

Hynix Mobile DDR2 can operate in temperature of -30oC ~ 85oC and has a lead and halogen free package featuring 168-ball FBGA and 12.0x12.0mm2, 0.8t, 0.5mm pitch.

The DDR2 has VDD1 of 1.8V and VDD2, VDDCA and VDDQ of 1.2V with HSUL_12 interface. The DDR2 features double data rate architecture for command, address and data Bus, differential clock inputs (CK_t, CK_c) and bi-directional differential data strobe (DQS_t, DQS_c).

At both increasing and decreasing edge of the data strobe Programmable RL (Read Latency) and WL (Write Latency), DM masks write data. The DDR2 supports programmable burst length of 4, 8 and 16 auto refresh and self refresh. DDR2 features Auto TCSR (Temperature Compensated Self Refresh) supported by all bank auto refresh and per bank auto refresh.

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