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Transistor modules, transistor arrays
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IGBT module
Features:
Features:
Easy paralleling due to the positive temperature coefficient of the on-state...
Features:
Easy paralleling due to the positive temperature coefficient of the on-state...
IGBT module
Features:
Features:
Easy paralleling due to the positive temperature coefficient of the on-state...
Features:
Easy paralleling due to the positive temperature coefficient of the on-state...
MOSFET module - max. 900 V
Features:
Vdss: 100V - 600V, Id(25): 38A - 63A
Low Rds(on): 25.0 mOhms
dv/dt ruggedness. Fast reverse diode
low inductive current path
Kelvin source terminals for easy drive
Isolated ceramic base plate with 2500 V rms isolation
Vdss: 100V - 600V, Id(25): 38A - 63A
Low Rds(on): 25.0 mOhms
dv/dt ruggedness. Fast reverse diode
low inductive current path
Kelvin source terminals for easy drive
Isolated ceramic base plate with 2500 V rms isolation
Bipolar transistor module / bipolar - 15 V, 2 A | ZXGD3102
The ZXGD3102 is intended to drive MOSFETs configured as ideal diode replacements. The device is comprised of a differential amplifier detector stage and high current driver. The detector monitors the reverse voltage...
Bipolar transistor module / bipolar - 15 V, 2 A | ZXGD3102
The ZXGD3102 is intended to drive MOSFETs configured as ideal diode replacements. The device is comprised of a differential amplifier detector stage and high current driver. The detector monitors the reverse voltage of the MOSFET such that if body diode conduction occurs a positive voltage is applied to the MOSFETs Gate pin. Once the positive voltage is applied to the Gate the MOSFET switches on allowing reverse current flow. The detectors output voltage is then proportional to the MOSFET Drain-Source reverse voltage drop and this is applied to the Gate via the driver. This action provides a rapid turn off as current decays.
Features and Benefits
Turn-off time typically 105ns
180V blocking voltage
Proportional Gate drive
2A Source, 5A Sink driver
VCC Range 5-15V
Low component count
Features and Benefits
Turn-off time typically 105ns
180V blocking voltage
Proportional Gate drive
2A Source, 5A Sink driver
VCC Range 5-15V
Low component count
MOSFET array - 1.4 - 1.5 W | DMS series
Features
Low On-Resistance
95mΩ @VGS = -4.5V
120mΩ @VGS = -2.5V
150mΩ (typ) @VGS = -1.8V
...
Low On-Resistance
95mΩ @VGS = -4.5V
120mΩ @VGS = -2.5V
150mΩ (typ) @VGS = -1.8V
...
MOSFET array - 1.4 - 1.5 W | DMS series
Features
Low On-Resistance
95mΩ @VGS = -4.5V
120mΩ @VGS = -2.5V
150mΩ (typ) @VGS = -1.8V
Low Gate Threshold Voltage, -1.3V Max
Fast Switching Speed
Low Input/Output Leakage
Incorporates Low VF Super Barrier Rectifier (SBR)
Low Profile, 0.5mm Max Height
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. Green Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Low On-Resistance
95mΩ @VGS = -4.5V
120mΩ @VGS = -2.5V
150mΩ (typ) @VGS = -1.8V
Low Gate Threshold Voltage, -1.3V Max
Fast Switching Speed
Low Input/Output Leakage
Incorporates Low VF Super Barrier Rectifier (SBR)
Low Profile, 0.5mm Max Height
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. Green Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Bipolar transistor module / MOSFET / bipolar - 50 V, 0.16 A, 0.25 W | DMB series
N-Channel MOSFET and NPN Transistor in One Package
Low On-Resistance
Very Low Gate Threshold Voltage,...
Low On-Resistance
Very Low Gate Threshold Voltage,...
Bipolar transistor module / MOSFET / bipolar - 50 V, 0.16 A, 0.25 W | DMB series
N-Channel MOSFET and NPN Transistor in One Package
Low On-Resistance
Very Low Gate Threshold Voltage, 1.0V max
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Lead, Halogen and Antimony Free, RoHS Compliant (Note 2)
ESD Protected MOSFET Gate up to 2kV
"Green" Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Low On-Resistance
Very Low Gate Threshold Voltage, 1.0V max
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Lead, Halogen and Antimony Free, RoHS Compliant (Note 2)
ESD Protected MOSFET Gate up to 2kV
"Green" Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Transistor module - 24 V | IMOPTR series
-Solid state switching technology allows switching speeds upto 20 MHz
-No physical / mechanical switching...
-No physical / mechanical switching...
Transistor module - 24 V | IMOPTR series
-Solid state switching technology allows switching speeds upto 20 MHz
-No physical / mechanical switching operation hence an operation life which is 10^5 times more than electro mechanical relays.
-Solid state technology ensures 100% switching with absolute no bounce or chatter.
-The transistor coupled with optical isolators ensure a higher isolation level between the input and outout.
-Option of fuse protection at output side.
-No physical / mechanical switching operation hence an operation life which is 10^5 times more than electro mechanical relays.
-Solid state technology ensures 100% switching with absolute no bounce or chatter.
-The transistor coupled with optical isolators ensure a higher isolation level between the input and outout.
-Option of fuse protection at output side.