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MOSFET module - max. 900 V
Features:Vdss: 100V - 600V, Id(25): 38A - 63A
Low Rds(on): 25.0 mOhms
dv/dt ruggedness. Fast reverse diode
low inductive current path
Kelvin source terminals for easy drive
Isolated ceramic base plate with 2500 V rms isolation