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Silicon photodiode - 200 - 1 100 nm | 663-2
The Model 663-2 Silicon Photodiode Detector is a product engineered by McPherson is operated together with a thermoelectric cooler for stabilization or cooling, complete...
Silicon photodiode - 200 - 1 100 nm | 663-2
The Model 663-2 Silicon Photodiode Detector is a product engineered by McPherson is operated together with a thermoelectric cooler for stabilization or cooling, complete with a double-gain input transimpedence amplifier. It provides a photodiode amplifier which is a DC paired double gain system. The diameter of the product is 2 mm.
The detector is stabilized and TE cooled and it features an integral FET Amplifier. It also have a complete system. Meanwhile, to avoid the tendency to fail and to hinder the saturation of the amplifier, the unit should be taken care by protecting them against stray light in times of operation.
The detector is stabilized and TE cooled and it features an integral FET Amplifier. It also have a complete system. Meanwhile, to avoid the tendency to fail and to hinder the saturation of the amplifier, the unit should be taken care by protecting them against stray light in times of operation.
InGaAs photodiode - 663-10
The Model 663-10 Indium Gallium Arsenide Detector features an NIR response, and is both TE cooled and stabilized. This is a high-performance photodiode/receiver operated through the...
InGaAs photodiode - 663-10
The Model 663-10 Indium Gallium Arsenide Detector features an NIR response, and is both TE cooled and stabilized. This is a high-performance photodiode/receiver operated through the use of a thermoelectric cooler, and it is fitted with a dual gain input transimpedence amplifier.
For this device, output voltage is always proportional to input signal, and it comes with an integral FET amplifier. This is a complete system that will fit into McPherson slit assemblies, but buyers should take care to shield the unit from stray light when in operation in order to prevent the amplifier from becoming saturated, as this could lead to device failure. A bias is supplied and the unit is mounted to a mounting flange.
For this device, output voltage is always proportional to input signal, and it comes with an integral FET amplifier. This is a complete system that will fit into McPherson slit assemblies, but buyers should take care to shield the unit from stray light when in operation in order to prevent the amplifier from becoming saturated, as this could lead to device failure. A bias is supplied and the unit is mounted to a mounting flange.
InGaAs photodiode - 663-11
The Model 663-11 "Sandwich" type is a detector engineered by McPherson which involves Silicon over Indium Gallium Arsenide Detectors. They are unique detectores that have 2 active...
InGaAs photodiode - 663-11
The Model 663-11 "Sandwich" type is a detector engineered by McPherson which involves Silicon over Indium Gallium Arsenide Detectors. They are unique detectores that have 2 active elements with different spectral response, mounted in a coaxial configuration. The upper detector is operates normally and works as a filter to the lower one. The lower detector contains typical characteristics but its spectral response is altered by the element of the upper detector.
The detectors feature complete system and they are stabilized and TE cooled. They fit McPherson slit assemblies and they are made for a very broad range of applications. Meanwhile, McPherson offers a standard 2-color detector which is a Si/InGaAs combination.
The detectors feature complete system and they are stabilized and TE cooled. They fit McPherson slit assemblies and they are made for a very broad range of applications. Meanwhile, McPherson offers a standard 2-color detector which is a Si/InGaAs combination.
Silicon photodiode - 663-11
The Model 663-11 sandwich Si/InGaAs detector is a silicon/indium gallium arsenide (Si/InGaAs) detector that is repsonsive to UV, visible and NIR light. The unit is fitted with two color...
Silicon photodiode - 663-11
The Model 663-11 sandwich Si/InGaAs detector is a silicon/indium gallium arsenide (Si/InGaAs) detector that is repsonsive to UV, visible and NIR light. The unit is fitted with two color detectors consisting of two active elements, both of which have different spectral respones. The detectors are mounted in coaxial configuration and the top detector features normal operating characteristics, providing a filter operation for the bottom detector.
The bottom component's spectral response is modified by the top detector element, and the device is operational within the 250-1,600nm region. This single detector facilitates a very wide range and is TE cooled and stabilized. The unit fits into McPherson slit assemblies.
The bottom component's spectral response is modified by the top detector element, and the device is operational within the 250-1,600nm region. This single detector facilitates a very wide range and is TE cooled and stabilized. The unit fits into McPherson slit assemblies.
PbS photodiode - 663-12
The Model 663-12 Lead Sulfide Detector is a product engineered by McPherson. It is operated together with a thermoelectric cooler, for stabilization or cooling, along...
PbS photodiode - 663-12
The Model 663-12 Lead Sulfide Detector is a product engineered by McPherson. It is operated together with a thermoelectric cooler, for stabilization or cooling, along with a double gain voltage amplifier. It provides a photoconductor amplifier. The amplifier is a DC paired, double gain system that needs a modulated input signal for operation. It features 1 up to 2.8 microns and a two-stage TE cooler. The cooler has a controller and an active area of 2x2 mm. It requires to be operated with chopped signals to lessen the noise.
The detector is stabilized and TE cooled and it features an integral FET Amplifier. It also have a complete system.
The detector is stabilized and TE cooled and it features an integral FET Amplifier. It also have a complete system.
Ultraviolet photodiode
Features
UV-Photodiodes based on SiC (Silicon Carbide)
Extremely radiation hard
Very low dark current, low capacitance
Very fast, also available with filters
also for DVGW and Austrian O-Norm standard certified lamp control
UV-Photodiodes based on SiC (Silicon Carbide)
Extremely radiation hard
Very low dark current, low capacitance
Very fast, also available with filters
also for DVGW and Austrian O-Norm standard certified lamp control
Photodiode - PR5001
With minimal size, the PR5001 is a dual photo diode with a maximum spectral sensitivity in the near infrared range. An active area of two times 0.75 mm x 1.2 mm is packaged in a small transparent DFN package with a size of only 1.8 mm x 2.9 mm....
Photodiode - PR5001
With minimal size, the PR5001 is a dual photo diode with a maximum spectral sensitivity in the near infrared range. An active area of two times 0.75 mm x 1.2 mm is packaged in a small transparent DFN package with a size of only 1.8 mm x 2.9 mm....