Random access memory / ferroelectric / FRAM

Random access memory / ferroelectric / FRAM
Fujitsu FRAM (Ferroelectric Memory) comes with multiple advantages common to non-volatile memory like E2PROM. Fujitsu Semiconductor group are responsible for the whole processes of FRAM, development and mass production that take place in Japan.

Data is preserved without the need for a power supply while providing high speed performance of SRAM. FRAM comes with two product families, parallel interface product and serial interface (I2C, SPI). FRAMS with Serial I/F can be replaced with the serial E2PROM or serial flash memory and products that have parallel I/F can be replaced with a low power SRAM or pseudo SRAM (PSRAM).

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