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HEMT transistor - TGI series
The Microwave Power GaN Hemt TGI1314-50L possess high power properties with pout of 47.0dBm at and Pin of 42.0dBm. The device contains high gain properties of GL with 8.0dB at 13.75GHz to 14.5GHz. It also has high compatibility with broad band internal matched HEMT. The package is made out of hermetically packed and sealed process.